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Silicon w/silicon Nitride Film (SiN)

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Product Properties
Description MSC offers high quality silicon nitride (SiN) films deposited by LPCVD and PECVD on 2” to 12” silicon wafers. Within LPCVD, we have the option to deposit high stress/stoichiometric, low stress and super low stress SiN films. Within PECVD, we have low stress and oxynitride films. SiN films can be deposited in the thickness range of 10nm – 2µm.
Note that LPCVD is a high temperature process with an option to deposit films on both sides of the wafer. PECVD on the other hand is a preferred option for low temperature processes. PECVD films are available for deposition only on one side of the wafer. We offer prime wafers only.
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Additional information

Diameter

2”, 3”, 4”, 5”, 6”, 8”, 12”
Deposition

LPCVD, PECVD, PECVD Oxynitride
Sides

ONE-SIDED, TWO-SIDED
Tensile Stress

800 +/- 50 MPa, Low stress: 250 +/- 50 MPa, Super low stress: 100 +/- 50 MPa, 400 +/- 50 MPa, Low stress: 250 +/- 50 MPa
Thickness (100nm - 3 µm)

(100nm – 3 µm)
Types

CZ, FZ
Dopant

B, P, Undoped
Orientation

100, 111, 110, custom
Flats/Notch

No, SEMI Primary, Jeida Flat, 2 SEMI Flats, Flat Notch
Finish

SSP, DSP
Resistivity (ohm-cm)

≤0.005, 0.01 – 0.02, 1-5, 5-10, 10-20, 20-30, 30-100
Thickness

100+ (2”, 3”, 4”); 300+ (6”); 400+ (8”); 500+ (10”,12”)”

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