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Silicon wafers w/Thermal Oxide (Si/SiO2) (Copy)

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Product Properties
Description Thermal silicon dioxide (SiO2) is used as gate dielectric (insulator), passivation and etch stop layers. MSC offers high quality thermally grown oxides on 2” to 12” silicon wafers. We offer prime wafers only.

Additional information

Diameter

2”, 3”, 4”, 5”, 6”, 8”, 12”

Oxidation Type

WET, DRY, DRY CLORINATED w/FG ANNEAL

Sides

ONE-SIDED, TWO-SIDED

Film Thickness

Wet: 50nm – 10µm; Dry: 10nm – 300nm

Type

CZ, FZ

Dopant

B, P, Undoped

Orientation

100, 111, 110, custom

Resistivity (ohm-cm)

≤0.005, 0.01 – 0.02, 1-5, 5-10, 10-20, 20-30, 30-100

Thickness (um)

200, 279, 300, 381, 400, 525, 625, 675, 725, 775

Flats/Notch

No, SEMI Primary Flat, Jeida Flat, 1 SEMI Flats, 2 SEMI Flats, 1 SEMI Notch

Finish

SSP, DSP

Lasermark (8” & 12” only)

None, SEMI M13 FRONT-SIDE MARK, SEMI M13 BACK-SIDE MARK, FRONT-SIDE & BACK-SIDE MIXED