Additional information
| Size | 1 Quart, 1 Gallon, 4×1 Gallon, 5 Gallon, 55 Gallon |
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| Ratio | 4:1, 5:1, 8:1, 9:1, 10:1, 20:1, 50:1, 100:1 |
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| Product Properties | |
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| Description | High purity HF etchants for thermally grown or deposited silicon dioxide films. Silicon dioxide etchants are ideal for semiconductor applications requiring minimal undercutting and broad compatibility. Buffered Oxide Etchants ship standard without surfactant. Non-PFAS surfactant added upon request. |
| Key Features | Wide range of etch rates, High purity, Ready to use, Broad compatibility with photoresists |
| Chemical Formula | BOE |
| Appearance | Colorless liquid |
| Odor | Acrid, pungent |
| Density | 1.11 g/cm³ @20°C |
| Boiling Point | 104°C |
| Melting Point | -35°C |
| Solubility | Completely miscible in water |
| Particle Count | Learn more |
| Application | Etching of thermally grown or deposited silicon dioxide in semiconductor manufacturing |
| Safety Data Sheet | Download SDS |
| Size | 1 Quart, 1 Gallon, 4×1 Gallon, 5 Gallon, 55 Gallon |
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| Ratio | 4:1, 5:1, 8:1, 9:1, 10:1, 20:1, 50:1, 100:1 |
